Gerald Lucovsky

According to our database, Gerald Lucovsky authored at least 10 papers between 1993 and 2008.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2008

Suppression of Ge-O and Ge-N bonding at Ge-HfO₂ and Ge-TiO₂ interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices.

S. Lee, J. P. Long, Gerald Lucovsky, J. L. Whitten, H. Seo, J. Lüning

Microelectron. Reliab., 2008

2006

Intrinsic bonding defects in transition metal elemental oxides.

Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker

Microelectron. Reliab., 2006

2005

Bond strain and defects at interfaces in high-k gate stacks.

Gerald Lucovsky, James C. Phillips

Microelectron. Reliab., 2005

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra.

Gerald Lucovsky, J. G. Hong, Charles C. Fulton, N. A. Stoute, Y. Zou, Robert J. Nemanich, David E. Aspnes, H. Ade, D. G. Schlom

Microelectron. Reliab., 2005

2004

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress.

Yi-Mu Lee, Yider Wu, Gerald Lucovsky

Microelectron. Reliab., 2004

2003

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects.

Gerald Lucovsky

Microelectron. Reliab., 2003

2002

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

Carlton M. Osburn, Indong Kim, Sungkee Han, Indranil De, Kam F. Yee, Shyam Gannavaram, Sung-Joo Lee, Chung-Ho Lee, Zhijiong J. Luo, Wenjuan Zhu, John R. Hauser, Dim-Lee Kwong, Gerald Lucovsky, T. P. Ma, Mehmet C. Öztürk

IBM J. Res. Dev., 2002

2001

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics.

Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson

Microelectron. Reliab., 2001

1999

Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability.

Gerald Lucovsky

IBM J. Res. Dev., 1999

1993

Cener for advanced electronic materials processing.

Nino A. Masnari, John R. Hauser, Gerald Lucovsky, Dennis M. Maher, Robert J. Markunas, Mehmet C. Bztork, Jimmie J. Wortman

Proc. IEEE, 1993