Gennadi Bersuker

According to our database, Gennadi Bersuker authored at least 23 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Signal duration sensitive degradation in scaled devices.

Gennadi Bersuker, E. Tang, Dmitry Veksler

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices.

S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay Kumar Banerjee

Proceedings of the Device Research Conference, 2022

2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Switching Variability Factors in Compliance-Free Metal Oxide RRAM.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon.

Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain

IEEE Trans. Reliab., 2015

Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs.

G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Threading dislocations in III-V semiconductors: Analysis of electrical conduction.

Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Assessing device reliability through atomic-level modeling of material characteristics.

Gennadi Bersuker

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013

Microscopic degradation models for advanced technology.

Gennadi Bersuker

Proceedings of the 2013 International Symposium on VLSI Design, Automation, and Test, 2013

Connecting RRAM performance to the properties of the hafnia-based dielectrics.

Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO₂/Pt structures.

Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen

Microelectron. Reliab., 2012

Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world.

Chang Yong Kang, K. W. Ang, R. Hill, W. Y. Loh, Jungwoo Oh, Rinus Lee, David Gilmer, Gennadi Bersuker, C. Hobbs, Paul Kirsch, Klaus Hummler, S. Arkalgud, Raj Jammy

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

Random Telegraph Signal noise properties of HfOx RRAM in high resistive state.

Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009

Temperature dependent time-to-breakdown (T_BD) of TiN/HfO₂ n-channel MOS devices in inversion.

N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra

Microelectron. Reliab., 2009

2008

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.

R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis

Microelectron. Reliab., 2008

2007

Electrical characterization and analysis techniques for the high-kappa era.

Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker

Microelectron. Reliab., 2007

Applications of DCIV method to NBTI characterization.

Arnost Neugroschel, Gennadi Bersuker, Rino Choi

Microelectron. Reliab., 2007

2006

Intrinsic bonding defects in transition metal elemental oxides.

Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker

Microelectron. Reliab., 2006

2005

Probing stress effects in HfO₂ gate stacks with time dependent measurements.

Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff

Microelectron. Reliab., 2005

2004

Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics.

Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto

Microelectron. Reliab., 2004

2001

Degradation of thin oxides during electrical stress.

Gennadi Bersuker, Yongjoo Jeon, Howard R. Huff

Microelectron. Reliab., 2001