Gengchiau Liang

According to our database1, Gengchiau Liang authored at least 9 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

First Demonstration of BEOL-Compatible 3D Vertical FeNOR.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
Ground-State Probabilistic Logic with the Simplest Binary Energy Landscape for Probabilistic Computing.
CoRR, 2023

Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing.
CoRR, 2023

Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10<sup>-10</sup> Ω-cm<sup>2</sup> ρc from Cryogenic (5 K) to Room Temperature.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2017
Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 μm.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2017

2015
Germanium-tin on Silicon p-i-n photodiode with low dark current due to sidewall surface passivation.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2015


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