Geert Hellings

According to our database, Geert Hellings authored at least 42 papers between 2010 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Backside Power Delivery in High Density and High Performance Context: IR-Drop and Block-Level Power-Performance-Area Benefits.

Yun Zhou, S. C. Song, Halil Kükner, Giuliano Sisto, Sheng Yang, Anita Farokhnejad, Mohamed Naeim, Moritz Brunion, Ji-Yung Lin, Odysseas Zografos, Pieter Weckx, Shashank Ekbote, Nick Stevens-Yu, David Greenlaw, Steve Molloy, Geert Hellings, Julien Ryckaert

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5).

S. Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, Gioele Mirabelli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation.

Subrat Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, A. Sharma, G. Mirabeli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert

Proceedings of the IEEE International Reliability Physics Symposium, 2024

GNN-assisted Back-side Clock Routing Methodology for Advance Technologies.

Nesara Eranna Bethur, Pruek Vanna-Iampikul, Odysseas Zografos, Lingjun Zhu, Giuliano Sisto, Dragomir Milojevic, Alberto García Ortiz, Geert Hellings, Julien Ryckaert, Francky Catthoor, Sung Kyu Lim

Proceedings of the 61st ACM/IEEE Design Automation Conference, 2024

2023

3D SRAM Macro Design in 3D Nanofabric Process Technology.

Dawit Burusie Abdi, Shairfe Muhammad Salahuddin, Jürgen Bömmels, Edouard Giacomin, Pieter Weckx, Julien Ryckaert, Geert Hellings, Francky Catthoor

IEEE Trans. Circuits Syst. I Regul. Pap., July, 2023

PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology.

S. Yang, Pieter Schuddinck, Marie Garcia Bardon, Yang Xiang, Anabela Veloso, B. T. Chan, Gioele Mirabelli, Gaspard Hiblot, Geert Hellings, Julien Ryckaert

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Block-level Evaluation and Optimization of Backside PDN for High-Performance Computing at the A14 node.

Giuliano Sisto, R. Preston, Rongmei Chen, Gioele Mirabelli, Anita Farokhnejad, Yun Zhou, Ivan Ciofi, Anne Jourdain, A. Veloso, Michele Stucchi, Odysseas Zografos, Pieter Weckx, Geert Hellings, Julien Ryckaert

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs.

Wen-Chieh Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper.

Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Towards Chip-Package-System Co-optimization of Thermally-limited System-On-Chips (SOCs).

Subrat Mishra, Sankatali Venkateswarlu, Bjorn Vermeersch, Moritz Brunion, Melina Lofrano, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Gaspard Hiblot, Geert Van der Plas, Pieter Weckx, Geert Hellings, James Myers, Francky Catthoor, Julien Ryckaert

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Evaluation of Nanosheet and Forksheet Width Modulation for Digital IC Design in the Sub-3-nm Era.

Giuliano Sisto, Odysseas Zografos, Bilal Chehab, Naveen Kakarla, Yang Xiang, Dragomir Milojevic, Pieter Weckx, Geert Hellings, Julien Ryckaert

IEEE Trans. Very Large Scale Integr. Syst., 2022

Self-Heating in iN8-iN2 CMOS Logic Cells: Thermal Impact of Architecture (FinFET, Nanosheet, Forksheet and CFET) and Scaling Boosters.

Bjorn Vermeersch, Erik Bury, Yang Xiang, Pieter Schuddinck, Krishna K. Bhuwalka, Geert Hellings, Julien Ryckaert

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO.

Kateryna Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, Jo De Boeck, Guido Groeseneken, Julien Ryckaert, Geert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch.

Pieter Schuddinck, Fabian M. Bufler, Yang Xiang, Anita Farokhnejad, Gioele Mirabelli, Anne Vandooren, Bilal Chehab, A. Gupta, César Roda Neve, Geert Hellings, Julien Ryckaert

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Backside PDN and 2.5D MIMCAP to Double Boost 2D and 3D ICs IR-Drop beyond 2nm Node.

Rongmei Chen, Giuliano Sisto, Michele Stucchi, Anne Jourdain, Kenichi Miyaguchi, Pieter Schuddinck, P. Woeltgens, H. Lin, Naveen Kakarla, Anabela Veloso, Dragomir Milojevic, Odysseas Zografos, Pieter Weckx, Geert Hellings, Geert Van der Plas, Julien Ryckaert, Eric Beyne

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.

Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology.

Gautam Gaddemane, Krishna K. Bhuwalka, Philippe Matagne, Gerhard Rzepa, Maarten L. Van De Put, Sybren Santermans, Oskar Baumgartner, Hao Wu, Geert Hellings

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies.

Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks.

Amita Rawat, Krishna K. Bhuwalka, Philippe Matagne, Bjorn Vermeersch, Hao Wu, Geert Hellings, Julien Ryckaert, Changze Liu

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020

A Compact Physics Analytical Model for Hot-Carrier Degradation.

Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.

Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Comparative Analysis of the Degradation Mechanisms in Logic and I/O FinFET Devices Induced by Plasma Damage.

Gaspard Hiblot, Yefan Liu, Geert Hellings, Geert Van der Plas

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Concise Analytical Expression for Wunsch-Bell 1-D Pulsed Heating and Applications in ESD Using TLP.

Geert Hellings, Philippe Roussel, Nian Wang, Roman Boschke, Shih-Hung Chen, Marko Simicic, Mirko Scholz, Soeren Stoedel, Kris Myny, Dimitri Linten, Paul Hellings, Nowab Reza M. D. Ashif

Proceedings of the IEEE International Reliability Physics Symposium, 2019

CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies.

Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Scalability comparison between raised- and embedded-SiGe source/drain structures for Si_0.55Ge_0.45 implant free quantum well pFET.

Shimpei Yamaguchi, Liesbeth Witters, Jérôme Mitard, Geert Eneman, Geert Hellings, Andriy Hikavyy, Roger Loo, Naoto Horiguchi

Microelectron. Reliab., 2018

Comphy - A compact-physics framework for unified modeling of BTI.

Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser

Microelectron. Reliab., 2018

ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology.

Marko Simicic, Geert Hellings, Shih-Hung Chen, Naoto Horiguchi, Dimitri Linten

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Scaling CMOS beyond Si FinFET: an analog/RF perspective.

Bertrand Parvais, Geert Hellings, Marko Simicic, Pieter Weckx, Jérôme Mitard, Doyoung Jang, V. Deshpande, B. van Liempc, Anabela Veloso, A. Vandooren, Niamh Waldron, Piet Wambacq, Nadine Collaert, Diederik Verkest

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

ESD characterisation of a-IGZO TFTs on Si and foil substrates.

Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny, Soeren Steudel, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Tunable ESD clamp for high-voltage power I/O pins of a battery charge circuit in mobile applications.

Mirko Scholz, Geert Hellings, Shih-Hung Chen, Dimitri Linten

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Impact of on- and off-chip protection on the transient-induced latch-up sensitivity of CMOS IC.

Mirko Scholz, Shih-Hung Chen, Geert Hellings, Dimitri Linten

Microelectron. Reliab., 2016

2015

Active-lite interposer for 2.5 & 3D integration.

Geert Hellings, Mirko Scholz, Mikael Detalle, Dimitrios Velenis, Muriel de Potter de ten Broeck, C. Roda Neve, Y. Li, Stefaan Van Huylenbroeck, Shih-Hung Chen, Erik Jan Marinissen, Antonio La Manna, Geert Van der Plas, Dimitri Linten, Eric Beyne, Aaron Thean

Proceedings of the Symposium on VLSI Circuits, 2015

ESD characterization of planar InGaAs devices.

Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Impact of fin shape variability on device performance towards 10nm node.

Kazuyuki Tomida, Keizo Hiraga, Morin Dehan, Geert Hellings, Doyoung Jang, Kenichi Miyaguchi, Thomas Chiarella, Minsoo Kim, Anda Mocuta, Naoto Horiguchi, Abdelkarim Mercha, Diederik Verkest, Aaron Thean

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Impact of local interconnects on ESD design.

Mirko Scholz, Shih-Hung Chen, Geert Hellings, Dimitri Linten, Roman Boschke

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

ESD protection diodes in optical interposer technology.

Roman Boschke, Guido Groeseneken, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Processing active devices on Si interposer and impact on cost.

Dimitrios Velenis, Mikael Detalle, Geert Hellings, Mirko Scholz, Erik Jan Marinissen, Geert Van der Plas, Antonio La Manna, Andy Miller, Dimitri Linten, Eric Beyne

Proceedings of the 2015 International 3D Systems Integration Conference, 2015

2013

Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies.

Geert Hellings, Shih-Hung Chen, Dimitri Linten, Mirko Scholz, Guido Groeseneken

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2010

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures.

Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov

Microelectron. Reliab., 2010