Gaetano Barone

According to our database, Gaetano Barone authored at least 2 papers between 2012 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions.

Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

TCAD degradation modeling for LDMOS transistors.

Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise

Proceedings of the 2012 European Solid-State Device Research Conference, 2012