Gabriele Navarro

According to our database, Gabriele Navarro authored at least 23 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation.

Joel Minguet Lopez, Manon Dampfhoffer, Tifenn Hirtzlin, Lucas Reganaz, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Thomas Magis, Catherine Carabasse, Niccolo Castellani, Valentina Meli, Elisa Vianello, Damien Deleruyelle, Jean-Michel Portal, Gabriel Molas, François Andrieu

Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023

Multi Level Cell Reliability in Ge-rich GeSbTe-based Phase Change Memory Arrays.

Valentina Meli, Gabriele Navarro, J. Rottner, Niccolo Castellani, S. Martin, N. P. Tran, Guillaume Bourgeois, C. Sabbione, Marie Claire Cyrille

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate.

Gabriele Navarro, C. Sabbione, Valentina Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu

Proceedings of the IEEE International Memory Workshop, 2022

1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing.

Joel Minguet Lopez, François Rummens, Lucas Reganaz, A. Heraud, Tifenn Hirtzlin, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Niccolo Castellani, Valentina Meli, S. Martin, Thomas Magis, Elisa Vianello, C. Sabbione, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Gabriel Molas, François Andrieu

Proceedings of the IEEE International Memory Workshop, 2022

TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory.

Giusy Lama, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement.

Camille Laguna, Mathieu Bernard, Julien Garrione, Niccolo Castellani, Valentina Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction.

C. De Camaret, Guillaume Bourgeois, Olga Cueto, Valentina Meli, S. Martin, D. Despois, V. Beugin, Niccolo Castellani, Marie Claire Cyrille, François Andrieu, Julien Arcamone, Y. Le-Friec, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

PCM-Trace: Scalable Synaptic Eligibility Traces with Resistivity Drift of Phase-Change Materials.

Yigit Demirag, Filippo Moro, Thomas Dalgaty, Gabriele Navarro, Charlotte Frenkel, Giacomo Indiveri, Elisa Vianello, Melika Payvand

Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization.

Joel Minguet Lopez, Lucas Hudeley, Laurent Grenouillet, Diego Alfaro Robayo, Jury Sandrini, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Damien Deleruyelle, Niccolo Castellani, Marc Bocquet, Jean-Michel Portal, Etienne Nowak, Gabriel Molas

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory.

Giusy Lama, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Emmanuel Nolot, Niccolo Castellani, Julien Garrione, Marie Claire Cyrille, Gabriele Navarro, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays.

Joel Minguet Lopez, Niccolo Castellani, Laurent Grenouillet, Lucas Reganaz, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Thomas Magis, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Etienne Nowak, Gabriel Molas

Proceedings of the IEEE International Memory Workshop, 2021

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance.

Camille Laguna, Mathieu Bernard, Nicolas Bernier, D. Rouchon, N. Rochat, Julien Garrione, A. Jannaud, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, C. Sabbione, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, Gabriele Navarro, Etienne Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2018

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance.

Anthonin Verdy, Gabriele Navarro, Mathieu Bernard, Sophie Chevalliez, Niccolo Castellani, Emmanuel Nolot, Julien Garrione, Pierre Noe, Guillaume Bourgeois, Veronique Sousa, Marie Claire Cyrille, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2018

OTS selector devices: Material engineering for switching performance.

Marie Claire Cyrille, Anthonin Verdy, Gabriele Navarro, Guillaume Bourgeois, Julien Garrione, Mathieu Bernard, C. Sabbione, Pierre Noe, Etienne Nowak

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks.

Elisa Vianello, Denys R. B. Ly, Selina La Barbera, Thomas Dalgaty, Niccolo Castellani, Gabriele Navarro, Guillaume Bourgeois, Alexandre Valentian, Etienne Nowak, Damien Querlioz

Proceedings of the 25th IEEE International Conference on Electronics, Circuits and Systems, 2018

2017

Phase Change and Magnetic Memories for Solid-State Drive Applications.

Cristian Zambelli, Gabriele Navarro, Veronique Sousa, Ioan Lucian Prejbeanu, Luca Perniola

Proc. IEEE, 2017

Innovative GeS2/Sb2Te3 based phase change memory for low power applications.

Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola

Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

2015

Optimized temperature profile based pulse generator for innovative Phase Change Memory.

Athanasios Kiouseloglou, Gabriele Navarro, Alessandro Cabrini, Luca Perniola, Guido Torelli

Proceedings of the IEEE 13th International New Circuits and Systems Conference, 2015

Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements.

Sarra Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, Martin Coué, Luca Perniola, P. Zuliani, Roberto Annunziata

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Current pulse generator for multilevel cell programming of innovative PCM.

Athanasios Kiouseloglou, Gabriele Navarro, Alessandro Cabrini, Guido Torelli, Luca Perniola

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Optimal programming with voltage-controlled temperature profile to reduce SET state distribution dispersion in PCM.

Athanasios Kiouseloglou, Erika Covi, Gabriele Navarro, Alessandro Cabrini, Luca Perniola, Guido Torelli

Proceedings of the 21st IEEE International Conference on Electronics, Circuits and Systems, 2014

2012

High temperature reliability of μtrench Phase-Change Memory devices.

Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo

Microelectron. Reliab., 2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012