G. Ribes

According to our database, G. Ribes authored at least 8 papers between 2003 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

New insight in plasma charging impact on gate oxide breakdown in FDSOI technology.

M. Akbal, G. Ribes, L. Vallier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Plasma induced damage investigation in the fully depleted SOI technology.

M. Akbal, G. Ribes, M. Guillermet, L. Vallier

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2010

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation.

L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent

Microelectron. Reliab., 2010

2009

Oxide Soft Breakdown : From device modeling to small circuit simulation.

L. Gerrer, Gérard Ghibaudo, G. Ribes

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2006

Designing in reliability in advanced CMOS technologies.

C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix

Microelectron. Reliab., 2006

2005

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.

G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

2003

New insights into the change of voltage acceleration and temperature activation of oxide breakdown.

G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard

Microelectron. Reliab., 2003