G. R. Mulfinger

According to our database, G. R. Mulfinger authored at least 1 paper in 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor.

D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017