G. Guibaud

According to our database, G. Guibaud authored at least 2 papers between 2017 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation.

F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane

Microelectron. Reliab., 2018

2017

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.

F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud

Microelectron. Reliab., 2017