G. Guégan

According to our database, G. Guégan authored at least 3 papers between 2001 and 2002.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2002

Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs.

M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan

Microelectron. Reliab., 2002

Origin of hot carrier degradation in advanced nMOSFET devices.

B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan

Microelectron. Reliab., 2002

2001

Stress induced leakage current at low field in ultra thin oxides.

François Lime, Gérard Ghibaudo, G. Guégan

Microelectron. Reliab., 2001