G. Ghidini

According to our database, G. Ghidini authored at least 13 papers between 2001 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Charge-related phenomena and reliability of non-volatile memories.

G. Ghidini

Microelectron. Reliab., 2012

2009

Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscale.

Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani

Microelectron. Reliab., 2009

2007

High-K dielectrics for inter-poly application in non volatile memories.

A. Sebastiani, R. Piagge, Alberto Modelli, G. Ghidini

Microelectron. Reliab., 2007

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs.

Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini

Microelectron. Reliab., 2007

2006

Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress.

Simone Gerardin, Alessio Griffoni, Andrea Cester, Alessandro Paccagnella, G. Ghidini

Microelectron. Reliab., 2006

2005

In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability.

M. Langenbuch, R. Bottini, Maria Elena Vitali, G. Ghidini

Microelectron. Reliab., 2005

Impact of interface and bulk trapped charges on transistor reliability.

G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, Andrea Ghetti, N. Galbiati, G. Giusto, A. Garavaglia

Microelectron. Reliab., 2005

Tunnel oxide degradation under pulsed stress.

G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, Maria Elena Vitali

Microelectron. Reliab., 2005

2003

Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET.

G. Ghidini, A. Garavaglia, G. Giusto, Andrea Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, Daniele Ielmini

Microelectron. Reliab., 2003

Anomalous gate oxide conduction on isolation edges: analysis and process optimization.

Andrea Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini, Alessia Pavan

Microelectron. Reliab., 2003

Ionising radiation effects on MOSFET drain current.

S. Cimino, Andrea Cester, Alessandro Paccagnella, G. Ghidini

Microelectron. Reliab., 2003

2002

Evaluation methodology of thin dielectrics for non-volatile memory application.

G. Ghidini, D. Brazzelli

Microelectron. Reliab., 2002

2001

Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling.

N. Galbiati, G. Ghidini, C. Cremonesi, Luca Larcher

Microelectron. Reliab., 2001