Fritz Berkmann

According to our database, Fritz Berkmann authored at least 6 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si.

Yasmine Elogail, Fritz Berkmann, Caterina J. Clausen, Inga A. Fischer, Linda A. Hänel, Daniel Schwarz, Jörg Schulze

Microelectron. J., 2022

2021

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.

E. Sigle, David Weißhaupt, Michael Oehme, Hannes S. Funk, Daniel Schwarz, Fritz Berkmann, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures.

Lukas Seidel, Daniel Schwarz, Michael Oehme, A. Causevic, Hannes S. Funk, David Weißhaupt, Fritz Berkmann, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

Titanium and Nickel as alternative materials for mid Infrared Plasmonic.

Fritz Berkmann, M. Ayasse, F. Mörz, Inga A. Fischer, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

2020

Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.

Marco M. Dettling, David Weißhaupt, Hannes S. Funk, Michal Kern, Fritz Berkmann, Caterina J. Clausen, Michael Oehme, Daniel Schwarz, Joris van Slageren, Jörg Schulze

Proceedings of the 43rd International Convention on Information, 2020

2018

Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.

Fritz Berkmann, Lion Augel, M. B. Schilling, Audrey Berrier, Daniel Schwarz, David Weißhaupt, Michael Oehme, Jörg Schulze, Inga A. Fischer

Proceedings of the 41st International Convention on Information and Communication Technology, 2018