Frederic Monsieur

According to our database, Frederic Monsieur authored at least 19 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications.

Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Insight Into HCI Reliability on I/O Nitrided Devices.

C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2023

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.

S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2017

Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies.

Maxime Penzes, S. Dudit, Frederic Monsieur, Luca Silvestri, F. Nallet, D. Lewis, P. Perdu

Microelectron. Reliab., 2017

2016

Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs.

Giacomo Garegnani, Vincent Fiori, Gilles Gouget, Frederic Monsieur, Clément Tavernier

Microelectron. Reliab., 2016

2014

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies.

Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord

Proceedings of the 44th European Solid State Device Research Conference, 2014

2009

High voltage devices in advanced CMOS technologies.

Raúl Andrés Bianchi, Christine Raynaud, Floria Blanchet, Frederic Monsieur, Olivier Noblanc

Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2008

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride.

Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo

Microelectron. Reliab., 2008

2007

Degradation mechanism understanding of NLDEMOS SOI in RF applications.

D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac

Microelectron. Reliab., 2007

2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

2003

New insights into the change of voltage acceleration and temperature activation of oxide breakdown.

G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard

Microelectron. Reliab., 2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.

Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2003

2002

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.

David Roy, S. Bruyère, E. Vincent, Frederic Monsieur

Microelectron. Reliab., 2002

Gate oxide Reliability assessment optimization.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2002

2001

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.

Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta₂O₅ as gate dielectrics.

M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo

Microelectron. Reliab., 2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?

S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001