Frédéric Martinez

According to our database, Frédéric Martinez authored at least 3 papers in 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2007

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.

G. Néau, Frédéric Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau

Microelectron. Reliab., 2007

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization.

Cédric Leyris, Frédéric Martinez, M. Valenza, Alain Hoffmann, J. C. Vildeuil

Microelectron. Reliab., 2007

N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis.

Cédric Leyris, Frédéric Martinez, Alain Hoffmann, M. Valenza, J. C. Vildeuil

Microelectron. Reliab., 2007