Fred Gaillard

According to our database1, Fred Gaillard authored at least 18 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration.
Proceedings of the IEEE International Reliability Physics Symposium, 2021


Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Study of forward AC stress degradation of GaN-on-Si Schottky diodes.
Microelectron. Reliab., 2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).
Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.
Proceedings of the IEEE International Reliability Physics Symposium, 2018


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