Fred G. Kuper

According to our database, Fred G. Kuper authored at least 14 papers between 2001 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

RF CMOS reliability simulations.

Guido T. Sasse, Mustafa Acar, Fred G. Kuper, Jurriaan Schmitz

Microelectron. Reliab., 2008

Automotive IC reliability: Elements of the battle towards zero defects.

Fred G. Kuper

Microelectron. Reliab., 2008

2006

Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs.

Cora Salm, André J. Hof, Fred G. Kuper, Jurriaan Schmitz

Microelectron. Reliab., 2006

2005

A 3-D Circuit Model to evaluate CDM performance of ICs.

M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper

Microelectron. Reliab., 2005

2004

Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect.

Zhichun Wang, Jan Ackaert, Cora Salm, Fred G. Kuper, Eddy De Backer

Microelectron. Reliab., 2004

Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes.

Guoqiao Tao, Andrea Scarpa, Leo van Marwijk, Kitty van Dijk, Fred G. Kuper

Microelectron. Reliab., 2004

2003

Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy.

M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper

Microelectron. Reliab., 2003

Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug.

Yuan Li, Klaas Jelle Veenstra, Jérôme Dubois, Lei Peters-Wu, Agnes van Zomeren, Fred G. Kuper

Microelectron. Reliab., 2003

2002

The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress.

M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper

Microelectron. Reliab., 2002

Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime.

H. V. Nguyen, Cora Salm, R. Wenzel, A. J. Mouthaan, Fred G. Kuper

Microelectron. Reliab., 2002

Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling.

H. V. Nguyen, Cora Salm, J. Vroemen, J. Voets, Benno Krabbenborg, Jaap Bisschop, A. J. Mouthaan, Fred G. Kuper

Microelectron. Reliab., 2002

Zapping thin film transistors.

N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan

Microelectron. Reliab., 2002

2001

The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.

N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan

Microelectron. Reliab., 2001

Investigations on double-diffused MOS transistors under ESD zap conditions.

Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper

Microelectron. Reliab., 2001