François Triozon

According to our database, François Triozon authored at least 7 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements.

Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, François Aussenac, François Andrieu, François Triozon, Laurent Grenouillet

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions.

Riccardo Fontanini, Justine Barbot, Mattia Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, François Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2016

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD.

Gabriel Mugny, F. G. Pereira, Denis Rideau, François Triozon, Yann-Michel Niquet, Marco Pala, D. Garetto, Christophe Delerue

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.

J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Transport properties of strained silicon nanowires.

Yann-Michel Niquet, Christophe Delerue, Viet Hung Nguyen, Christophe Krzeminski, François Triozon

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot

Proceedings of the 2012 European Solid-State Device Research Conference, 2012