Florian Cacho
According to our database1,
Florian Cacho
authored at least 51 papers
between 2007 and 2024.
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Bibliography
2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024
2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Minimum SRAM Retention Voltage: Insight about optimizing Power Efficiency across Temperature Profile, Process Variation and Aging.
Proceedings of the 29th International Symposium on On-Line Testing and Robust System Design, 2023
2022
Design-Time Exploration for Process, Environment and Aging Compensation Techniques for Low Power Reliable-Aware Design.
IEEE Trans. Emerg. Top. Comput., 2022
40nm Ultra-low Leakage SRAM with Embedded Sub-threshold Analog Closed Loop System for Efficient Source Biasing of the Memory Array in Retention Mode.
Proceedings of the 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems, 2022
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the 25th IEEE International Symposium on On-Line Testing and Robust System Design, 2019
2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the 24th IEEE International Symposium on On-Line Testing And Robust System Design, 2018
NBTI aged cell rejuvenation with back biasing and resulting critical path reordering for digital circuits in 28nm FDSOI.
Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018
2017
Microelectron. Reliab., 2017
Microelectron. Reliab., 2017
Proceedings of the IEEE International Test Conference, 2017
Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017
Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017
Proceedings of the IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2017
Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2017
2016
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results.
Proceedings of the 34th IEEE VLSI Test Symposium, 2016
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability.
Proceedings of the 1st IEEE International Verification and Security Workshop, 2016
Activity profiling: Review of different solutions to develop reliable and performant design.
Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.
Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016
Workload Impact on BTI HCI Induced Aging of Digital Circuits: A System level Analysis.
Proceedings of the Workshop on Early Reliability Modeling for Aging and Variability in Silicon Systems, 2016
Proceedings of the 2016 Design, Automation & Test in Europe Conference & Exhibition, 2016
Early failure prediction by using in-situ monitors: Implementation and application results.
Proceedings of the Workshop on Early Reliability Modeling for Aging and Variability in Silicon Systems, 2016
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015
Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015
2012
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses.
IEEE J. Solid State Circuits, 2012
2011
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011
2007
A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies.
Microelectron. Reliab., 2007