Fernando Guarin
According to our database1,
Fernando Guarin
authored at least 19 papers
between 2013 and 2023.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2008, "For contributions to semiconductor materials and reliability".
Timeline
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Bibliography
2023
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 29th IEEE North Atlantic Test Workshop, 2020
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
2014
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k.
Proceedings of the European Solid-State Device Research Conference, 2013