Ferdinando Iucolano

According to our database, Ferdinando Iucolano authored at least 9 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.

M. Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, Etienne Nowak, Aurore Constant, Ferdinando Iucolano

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs.

Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs.

Marcello Cioni, G. Giorgino, Alessandro Chini, Carmine Miccoli, Maria Eloisa Castagna, M. Moschetti, C. Tringali, Ferdinando Iucolano

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

A novel GaN HEMT degradation mechanism observed during HTST test.

Ferdinando Iucolano, Antonino Maurizio Parisi, Santo Reina, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2018