Fengwen Mu

According to our database, Fengwen Mu authored at least 2 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2023

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology.

Hangning Shi, Ailun Yi, Jiaxin Ding, Xudong Liu, Qingcheng Qin, Juemin Yi, Junjie Hu, Miao Wang, Demin Cai, Jianfeng Wang, Ke Xu, Fengwen Mu, Tadatomo Suga, René Heller, Mao Wang, Shengqiang Zhou, Wenhui Xu, Kai Huang, Tiangui You, Xin Ou

Sci. China Inf. Sci., November, 2023

2021

Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere.

Ying Meng, Runhua Gao, Xinhua Wang, Xiaojuan Chen, Sen Huang, Ke Wei, Dahai Wang, Fengwen Mu, Xinyu Liu

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021