Felix Palumbo

According to our database, Felix Palumbo authored at least 15 papers between 2005 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition.

Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, N. Gomez, Enrique Miranda, Jordi Suñé

Proceedings of the 12th IEEE Latin America Symposium on Circuits and System, 2021

2020

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition.

Fernando Leonel Aguirre, Sebastián Matías Pazos, Felix Palumbo, Jordi Suñé, Enrique Miranda

IEEE Access, 2020

2019

Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms.

Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Performance-reliability trade-offs in short range RF power amplifier design.

Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira

Microelectron. Reliab., 2018

Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp.

Andrés Fontana, Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Nahuel Vega, Nahuel A. Müller, Emanuel de la Fourniere, Mario Debray

Proceedings of the 31st Symposium on Integrated Circuits and Systems Design, 2018

Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity.

Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Xu Jing, Mario Lanza, Felix Palumbo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks.

Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks.

Felix Palumbo, Salvatore Lombardo, Moshe Eizenberg

Microelectron. Reliab., 2016

2015

General features of progressive breakdown in gate oxides: A compact model.

Felix Palumbo, Moshe Eizenberg, Salvatore Lombardo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013

Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam.

Santiago Martin Sondón, Alfredo Falcon, Pablo Sergio Mandolesi, Pedro Julián, Nahuel Vega, Francisco Nesprias, Jorge Davidson, Felix Palumbo, Mario Debray

Proceedings of the 14th Latin American Test Workshop, 2013

A dual core low power microcontroller with openMSP430 architecture for high reliability lockstep applications using a 180 nm high voltage technology node.

Santiago Martin Sondón, Pablo Sergio Mandolesi, Favio R. Masson, Pedro Julián, Felix Palumbo

Proceedings of the 4th IEEE Latin American Symposium on Circuits and Systems, 2013

2010

Radiation effects in nitride read-only memories.

Sebania Libertino, Domenico Corso, G. Murè, A. Marino, Felix Palumbo, Fabio Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, Michael Lisiansky, Yakov Roizin, Salvatore Lombardo

Microelectron. Reliab., 2010

2009

Radiation damage characterization of digital integrated circuits.

Santiago Martin Sondón, Pablo Sergio Mandolesi, Pedro Julián, Felix Palumbo, Martin Alurralde, Alberto Filevich

Proceedings of the 10th Latin American Test Workshop, 2009

2008

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.

R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis

Microelectron. Reliab., 2008

2005

Structure of the oxide damage under progressive breakdown.

Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang

Microelectron. Reliab., 2005