Farid Temcamani

According to our database, Farid Temcamani authored at least 9 papers between 2010 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Novel current-controlled negative resistance based on simplified negative current-controlled conveyors.

Zineb M'Harzi, Mustapha Alami, Farid Temcamani

Proceedings of the 2017 International Conference on Advanced Technologies for Signal and Image Processing (ATSIP), 2017

2016

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode.

Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry

Microelectron. Reliab., 2016

2015

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors.

Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani

Microelectron. Reliab., 2015

A novel high bandwidth current mode instrumentation amplifier.

Zineb M'Harzi, Mustapha Alami, Farid Temcamani

Proceedings of the 27th International Conference on Microelectronics, 2015

2014

Low power agile active filter with digitally controlled center-frequency.

Rami Rami, Mustapha Alami, Farid Temcamani, Yahya Lakys, Bruno Delacressonniere, Moulhime El Bekkali

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization.

Jean-Baptiste Fonder, Olivier Latry, Farid Temcamani, Cedric Duperrier

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

2012

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.

Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani

Microelectron. Reliab., 2012

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane

Microelectron. Reliab., 2012

2010

Improved RF CMOS active inductor with high self resonant frequency.

Cristian Andriesei, Liviu Goras, Farid Temcamani, Bruno Delacressonniere

Proceedings of the 17th IEEE International Conference on Electronics, 2010