Farid Medjdoub

According to our database, Farid Medjdoub authored at least 4 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.

N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs.

Ajay Shanbhag, Sruthi M. P, Farid Medjdoub, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Short-term reliability of high performance Q-band AlN/GaN HEMTs.

Riad Kabouche, Kathia Harrouche, Etienne Okada, Farid Medjdoub

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2014

High performance high reliability AlN/GaN DHFET.

Farid Medjdoub, Etienne Okada, Bertrand Grimbert, Damien Ducatteau, Riccardo Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014