Fabio Soci

According to our database, Fabio Soci authored at least 4 papers between 2012 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

2014

Traps localization and analysis in GaN HEMTs.

Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Microelectron. Reliab., 2014

2013

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs.

Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2013

2012

Field plate related reliability improvements in GaN-on-Si HEMTs.

Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2012