Fabiana Rampazzo
Affiliations:- University of Padua, Italy
According to our database1,
Fabiana Rampazzo
authored at least 18 papers
between 2004 and 2024.
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Bibliography
2024
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2015
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2015
2014
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.
Microelectron. Reliab., 2014
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.
Proceedings of the 44th European Solid State Device Research Conference, 2014
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.
Microelectron. Reliab., 2013
2012
Single- and double-heterostructure GaN-HEMTs devices for power switching applications.
Microelectron. Reliab., 2012
2007
Microelectron. Reliab., 2007
2006
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2006
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.
IEICE Electron. Express, 2006
2004
Microelectron. Reliab., 2004