Fabian M. Bufler

According to our database, Fabian M. Bufler authored at least 11 papers between 1998 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5).

S. Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, Gioele Mirabelli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation.

Subrat Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, A. Sharma, G. Mirabeli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch.

Pieter Schuddinck, Fabian M. Bufler, Yang Xiang, Anita Farokhnejad, Gioele Mirabelli, Anne Vandooren, Bilal Chehab, A. Gupta, César Roda Neve, Geert Hellings, Julien Ryckaert

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2020

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light.

Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh

Sensors, 2020

2017

On the ballistic ratio in 14nm-Node FinFETs.

Fabian M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Empirical ballistic mobility model for drift-diffusion simulation.

Axel Erlebach, K. H. Lee, Fabian M. Bufler

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2003

Proof of a simple time-step propagation scheme for Monte Carlo simulation.

Fabian M. Bufler, Andreas Schenk, Wolfgang Fichtner

Math. Comput. Simul., 2003

2002

Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1µm n-MOSFET.

Fabian M. Bufler, Andreas Schenk, Christoph Zechner, Natsuko Inada, Yoshinori Asahi, Wolfgang Fichtner

VLSI Design, 2002

2001

Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs.

Fabian M. Bufler, P. Douglas Yoder, Wolfgang Fichtner

VLSI Design, 2001

1998

Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times.

Burkhard Neinhüs, Stefan Decker, Peter Graf, Fabian M. Bufler, Bernd Meinerzhagen

VLSI Design, 1998

High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models.

Fabian M. Bufler, P. Graf, Bernd Meinerzhagen

VLSI Design, 1998