F. Saigné

According to our database, F. Saigné authored at least 4 papers between 2001 and 2003.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2003

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.

Damien Zander, F. Saigné, A. Meinertzhagen, Christian Petit

Microelectron. Reliab., 2003

2002

Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements.

F. Saigné, Olivier Quittard, Laurent Dusseau, F. Joffre, Coumar Oudéa, J. Fesquet, Jean Gasiot

Microelectron. Reliab., 2002

2001

Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.

D. Zander, F. Saigné, A. Meinertzhagen

Microelectron. Reliab., 2001

High field stress at and above room temperature in 2.3 nm thick oxides.

Damien Zander, Christian Petit, F. Saigné, A. Meinertzhagen

Microelectron. Reliab., 2001