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F. Rahmoune

According to our database1, F. Rahmoune authored at least 1 paper in 2005.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

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Bibliography

2005
On the SILC mechanism in MOSFET's with ultrathin oxides.
[BibTeX]
[DOI]
D. Bauza
,
F. Rahmoune
,
R. Laqli
,
Gérard Ghibaudo
Microelectron. Reliab., 2005


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