F. M. Newcomer

According to our database, F. M. Newcomer authored at least 1 paper in 2014.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2014

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses.

V. S. Pershenkov, Miguel Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez

Microelectron. Reliab., 2014