F. G. Shi

According to our database, F. G. Shi authored at least 2 papers between 2003 and 2004.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2004

Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films.

H. Zhou, F. G. Shi, B. Zhao, J. Yota

Microelectron. J., 2004

2003

Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experiments.

H. Zhou, F. G. Shi, B. Zhao

Microelectron. J., 2003