F. Boige

According to our database, F. Boige authored at least 4 papers between 2017 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation.

F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Marc Cousineau

Math. Comput. Simul., 2019

2018

Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation.

F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane

Microelectron. Reliab., 2018

2017

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.

F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud

Microelectron. Reliab., 2017

Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation.

F. Boige, Frédéric Richardeau

Microelectron. Reliab., 2017