Eythan Lam

According to our database, Eythan Lam authored at least 3 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process.

Eythan Lam, Jeff Shieh-Chieh Chien, Petra Rowell, Miguel Urteaga, James F. Buckwalter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS.

Jeff Shih-Chieh Chien, Eythan Lam, James F. Buckwalter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2021

Prospects for High-Efficiency Silicon and lll-V Power Amplifiers and Transmitters in 100-300 GHz Bands.

James F. Buckwalter, Mark J. W. Rodwell, Kang Ning, Ahmed S. H. Ahmed, Andrea Arias-Purdue, Jeff Chien, Everett O'Malley, Eythan Lam

Proceedings of the IEEE Custom Integrated Circuits Conference, 2021