Esteve Amat

According to our database, Esteve Amat authored at least 17 papers between 2012 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Modem Gain-Cell Memories in Advanced Technologies.

Esteve Amat, Ramon Canal, Antonio Rubio

Proceedings of the 24th IEEE International Symposium on On-Line Testing And Robust System Design, 2018

Quantum dot location relevance into SET-FET circuits based on FinFET devices.

Esteve Amat, Alberto del Moral, Joan R. Bausells, Francesc Pérez-Murano, Fabian J. Klüpfel

Proceedings of the Conference on Design of Circuits and Integrated Systems, 2018

2017

Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level.

Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio

Proceedings of the 27th International Symposium on Power and Timing Modeling, 2017

2016

RRAM variability and its mitigation schemes.

Peyman Pouyan, Esteve Amat, Said Hamdioui, Antonio Rubio

Proceedings of the 26th International Workshop on Power and Timing Modeling, 2016

Monitoring SRAM BTI degradation by current-based tracking technique.

Peyman Pouyan, Esteve Amat, Antonio Rubio

Proceedings of the 14th IEEE International New Circuits and Systems Conference, 2016

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation.

Manish Rana, Ramon Canal, Esteve Amat, Antonio Rubio

Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

2015

Analysis and design of an adaptive proactive reconfiguration approach for memristive crossbar memories.

Peyman Pouyan, Esteve Amat, Antonio Rubio

Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures, 2015

UTBB FDSOI technology flexibility for ultra low power internet-of-things applications.

Edith Beigné, Jean-Frédéric Christmann, Alexandre Valentian, Olivier Billoint, Esteve Amat, Dominique Morche

Proceedings of the 45th European Solid State Device Research Conference, 2015

Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme.

Peyman Pouyan, Esteve Amat, Antonio Rubio

Proceedings of the European Conference on Circuit Theory and Design, 2015

Statistical lifetime analysis of memristive crossbar matrix.

Peyman Pouyan, Esteve Amat, Antonio Rubio

Proceedings of the 10th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2015

2014

Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches.

Peyman Pouyan, Esteve Amat, Enrique Barajas, Antonio Rubio

Proceedings of the Fifteenth International Symposium on Quality Electronic Design, 2014

2013

A single event transient hardening circuit design technique based on strengthening.

Antonio Calomarde, Esteve Amat, Francesc Moll, Antonio Rubio

Proceedings of the IEEE 56th International Midwest Symposium on Circuits and Systems, 2013

Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells.

Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, Antonio Rubio, Ramon Canal

Proceedings of the IEEE 56th International Midwest Symposium on Circuits and Systems, 2013

Reliability study on technology trends beyond 20nm.

Esteve Amat, Antonio Calomarde, Antonio Rubio

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches.

Peyman Pouyan, Esteve Amat, Francesc Moll, Antonio Rubio

Proceedings of the Design, Automation and Test in Europe, 2013

2012

Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime.

Peyman Pouyan, Esteve Amat, Antonio Rubio

Proceedings of the 30th IEEE VLSI Test Symposium, 2012

Analysis of FinFET technology on memories.

Esteve Amat, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber

Proceedings of the 18th IEEE International On-Line Testing Symposium, 2012