Erwan Morvan

According to our database, Erwan Morvan authored at least 5 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique.

A. Divay, O. Valorge, C. Dubarry, M. Medbouhi, R. Franiatte, D. Mermin, R. Velard, Y. Gobil, F. Morisot, Erwan Morvan, Ismael Charlet, Luca Lucci, J. Lugo, Xavier Garros

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2009

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs.

Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk

Microelectron. Reliab., 2009

2005

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage

Microelectron. Reliab., 2005

2004

Reliability Investigation of Gallium Nitride HEMT.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl

Microelectron. Reliab., 2004