Ernest Y. Wu

According to our database, Ernest Y. Wu authored at least 18 papers between 2002 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling.

Huimei Zhou, Miaomiao Wang, Ernest Y. Wu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction.

Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition.

Ernest Y. Wu, Takashi Ando, Paul Jamison

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics.

Ernest Y. Wu, Baozhen Li

Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.

Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation.

Franco Stellari, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

TDDB Reliability in Gate-All-Around Nanosheet.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications.

Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD.

Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Reliability Challenges with Materials for Analog Computing.

Eduard A. Cartier, Wanki Kim, Nanbo Gong, Tayfun Gokmen, Martin M. Frank, Douglas M. Bishop, Youngseok Kim, Seyoung Kim, Takashi Ando, Ernest Y. Wu, Praneet Adusumilli, John Rozen, Paul M. Solomon, Wilfried Haensch, Matthew J. BrightSky, Abu Sebastian, Geoffrey W. Burr, Vijay Narayanan

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications.

Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).

Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013

Improving and optimizing reliability in future technologies with high-κ dielectrics.

Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu

Proceedings of the 2013 International Symposium on VLSI Design, Automation, and Test, 2013

2005

Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability.

Ernest Y. Wu, Jordi Suñé

Microelectron. Reliab., 2005

2004

Voltage acceleration and t63.2 of 1.6-10 nm gate oxides.

Rolf-Peter Vollertsen, Ernest Y. Wu

Microelectron. Reliab., 2004

2003

Critical reliability challenges in scaling SiO₂-based dielectric to its limit.

Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon

Microelectron. Reliab., 2003

Statistics of soft and hard breakdown in thin SiO₂ gate oxides.

Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai

Microelectron. Reliab., 2003

2002

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics.

Ernest Y. Wu, Edward J. Nowak, Alex Vayshenker, Wing L. Lai, David L. Harmon

IBM J. Res. Dev., 2002