Eric Jalaguier

According to our database, Eric Jalaguier authored at least 4 papers between 2013 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.

M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez, F. Mazen, E. Vilain, M. Guillermet, Simon Jeannot, Elisa Vianello, Luca Perniola

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization.

M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, Eric Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, Simon Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola

Proceedings of the 45th European Solid State Device Research Conference, 2015

2013

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design.

Elisa Vianello, Olivier Thomas, M. Harrand, Santhosh Onkaraiah, T. Cabout, Boubacar Traore, T. Diokh, Houcine Oucheikh, Luca Perniola, Gabriel Molas, Philippe Blaise, J.-F. Nodin, Eric Jalaguier, Barbara De Salvo

Proceedings of 2013 International Conference on IC Design & Technology, 2013

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations.

Boubacar Traore, Elisa Vianello, Gabriel Molas, Marc Gely, Jean-François Nodin, Eric Jalaguier, Philippe Blaise, Barbara De Salvo, Leonardo R. C. Fonseca, Kanhao Xue, Yoshio Nishi

Proceedings of the European Solid-State Device Research Conference, 2013