Erfan Abbasian

According to our database, Erfan Abbasian authored at least 14 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM.

Erfan Abbasian, Maryam Nayeri, Elangovan Mani

Circuits Syst. Signal Process., August, 2024

2023

An ultra-low power and energy-efficient ternary Half-Adder based on unary operators and two ternary 3:1 multiplexers in 32-nm GNRFET technology.

Erfan Abbasian, Maedeh Orouji, Sana Taghipour Anvari, Alireza Asadi, Ehsan Mahmoodi

Int. J. Circuit Theory Appl., October, 2023

Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM.

Erfan Abbasian, Sobhan Sofimowloodi

IEEE Trans. Circuits Syst. I Regul. Pap., May, 2023

Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications.

Erfan Abbasian, Bahare Grailoo, Mahdieh Nayeri

Circuits Syst. Signal Process., May, 2023

2022

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins.

Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour

IEEE Trans. Circuits Syst. I Regul. Pap., 2022

A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation.

Erfan Abbasian

IEEE Trans. Circuits Syst. I Regul. Pap., 2022

Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM.

Erfan Abbasian, Shilpi Birla, Morteza Gholipour

Microelectron. J., 2022

Improved read/write assist mechanism for 10-transistor static random access memory cell.

Erfan Abbasian, Morteza Gholipour

Int. J. Circuit Theory Appl., 2022

A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications.

Erfan Abbasian, Morteza Gholipour

Int. J. Circuit Theory Appl., 2022

Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices.

Erfan Abbasian, Shilpi Birla, Emad Mojaveri Moslem

Int. J. Circuit Theory Appl., 2022

A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology.

Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi

Circuits Syst. Signal Process., 2022

Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications.

Erfan Abbasian, Morteza Gholipour

Circuits Syst. Signal Process., 2022

2021

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design.

Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab

Int. J. Circuit Theory Appl., 2021

Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications.

Erfan Abbasian, Morteza Gholipour

Int. J. Circuit Theory Appl., 2021