En-xia Zhang

According to our database, En-xia Zhang authored at least 8 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Charge Trapping in Irradiated 3D Devices and ICs (Invited).

En-xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.

Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck

Proceedings of the Device Research Conference, 2023

2021

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.

Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2015

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.

A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, Aaron R. Arehart

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Total-ionizing-dose effects and reliability of carbon nanotube FET devices.

Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis

Microelectron. Reliab., 2014

2011

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH₃-rich conditions.

Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides

Microelectron. Reliab., 2011

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.

R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné

Microelectron. Reliab., 2011

2008

Practical considerations in the design of SRAM cells on SOI.

Wei He, Zheng-xuan Zhang, En-xia Zhang, Wenjie Yu, Hao Tian, Xi Wang

Microelectron. J., 2008