Emilio Yero

According to our database, Emilio Yero authored at least 4 papers between 2000 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.

Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Teruhiko Kamei, Masaaki Higashitani, Tuan Pham, Mitsuaki Honma, Yoshihisa Watanabe, Kazumi Ino, Binh Le, Byungki Woo, Khin Htoo, Taiyuan Tseng, Long Pham, Frank Tsai, Kwang-Ho Kim, Yi-Chieh Chen, Min She, Jonghak Yuh, Alex Chu, Chen Chen, Ruchi Puri, Hung-Szu Lin, Yi-Fang Chen, William Mak, Jonathan Huynh, Jim Chan, Mitsuyuki Watanabe, Daniel Yang, Grishma Shah, Pavithra Souriraj, Dinesh Tadepalli, Tenugu Suman, Ray Gao, Viski Popuri, Behdad Azarbayjani, Ravindra Madpur, James Lan, Emilio Yero, Feng Pan, Patrick Hong, Jang Yong Kang, Farookh Moogat, Yupin Fong, Raul Cernea, Sharon Huynh, Cuong Trinh, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2009

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate.

Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul-Adrian Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader

IEEE J. Solid State Circuits, 2009

2008

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.

Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jong Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2000

40-mm² 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory.

Giovanni Campardo, Rino Micheloni, Stefano Commodaro, Emilio Yero, Matteo Zammattio, Sabina Mognoni, Andrea Sacco, Massimiliano Picca, Alessandro Manstretta, Marco Scotti, Ilaria Motta, C. Golla, Andrea Pierin, Roberto Bez, Alessandro Grossi, Alberto Modelli, Angelo Visconti, Osama Khouri, Guido Torelli

IEEE J. Solid State Circuits, 2000