Eldad Bahat-Treidel

According to our database, Eldad Bahat-Treidel authored at least 11 papers between 2009 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.

Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

GaN-channel HEMTs with AlN buffer for high-voltage switching.

Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl

Proceedings of the Device Research Conference, 2021

2020

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications.

Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl

Proceedings of the 2020 Device Research Conference, 2020

2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale

Microelectron. Reliab., 2016

Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs.

Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl

Microelectron. Reliab., 2016

2015

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.

Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors.

Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl

Microelectron. Reliab., 2014

2012

Single- and double-heterostructure GaN-HEMTs devices for power switching applications.

Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso

Microelectron. Reliab., 2012

2011

Reliability issues of GaN based high voltage power devices.

Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska

Microelectron. Reliab., 2011

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements.

Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle

Microelectron. Reliab., 2011

2009

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.

Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle

Microelectron. Reliab., 2009