Edmundo A. Gutiérrez-D.

According to our database, Edmundo A. Gutiérrez-D. authored at least 4 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement Technique.

Alan Y. Otero-Carrascal, Dora A. Chaparro-Ortiz, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Gonzalez, P. Srinivasan

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET.

Dora A. Chaparro-Ortiz, Alan Y. Otero-Carrascal, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Guevara, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2014

Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al₂O₃/Al and Al/Al₂O₃/W structures fabricated on glass at 300 °C.

Joel Molina Reyes, Rene Valderrama, Carlos Zuniga, Pedro Rosales, Wilfrido Calleja Arriaga, Alfonso Torres-Jácome, Francisco Javier de la Hidalga Wade, Edmundo A. Gutiérrez-D.

Microelectron. Reliab., 2014

Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs.

A. Erika Pondigo de los, Edmundo A. Gutiérrez-D., Joel Molina Reyes, Fernando Guarin

Proceedings of the 44th European Solid State Device Research Conference, 2014