E. M. Bazizi

According to our database, E. M. Bazizi authored at least 13 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology.

Pratik B. Vyas, Ludovico Megalini, Ashish Pal, Joshua Holt, Archana Kumar, Stephen Weeks, Charisse Zhao, Lucien Date, Hansel Lo, Michel Khoury, Safdar Muhammad, Fabian Piallat, Ricky Fang, William Charles, Pratim Palit, Jinghe Yang, Qintao Zhang, Jang Seok Oh, Bryan Turner, Samphy Hong, Aswin Prathap Pitchiya, Benjamin Briggs, Jiao Yang, Dae Yang, Fengshou Wang, Joseph Lee, Gopal Prabhu, Dustin Ho, Carlos Caballero, Durga Chaturvedula, Zheng Yuan, Yi Zheng, David A. Britz, Stephen Krause, Raghav Sreenivasan, Michael Chudzik, Subi Kengeri, Siddarth A. Krishnan, El Mehdi Bazizi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Material, Process and System Level Analysis for Parasitic Reduction of Next Generation Logic Technology in Conjunction with Backside Power Delivery.

Ashish Pal, Sefa Dag, Pratik B. Vyas, Gregory Costrini, Vinod Reddy, Veeraraghavan Basker, Allen Yeong, Benjamin Colombeau, Bala Haran, Subi Kengeri, El Mehdi Bazizi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology.

Leitao Liu, Jingtian Fang, Ashish Pal, Plamen Asenov, Mohit Bajaj, Bei Deng, Xi-Wei Lin, Souvik Mahapatra, Subi Kengeri, El Mehdi Bazizi

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Gate-All-Around SRAM: Performance Investigation and Optimization Towards Vccmin Scaling.

Pratik B. Vyas, Ashish Pal, Gregory Costrini, Benjamin Colombeau, Bala Haran, Subi Kengeri, El Mehdi Bazizi

Proceedings of the IEEE International Memory Workshop, 2024

D2W Hybrid Bonding Challenges for HBM.

Gaurav Mehta, Jonathan Abdilla, Raymond Hung, El Mehdi Bazizi, Yong Chang Bum, Djuro Bikajlevic, Liu Jiang, Gregory Costrini

Proceedings of the IEEE International Memory Workshop, 2024

2023

BEOL Interconnect Innovation: Materials, Process and Systems Co-optimization for 3nm Node and Beyond.

Gaurav Thareja, Ashish Pal, Xingye Wang, Sefa Dag, Shi You, Shashank Sharma, Qing Zhu, Carmen L. Cervantes, Shinjae Hwang, Matthew Spuller, Ben Ng, Pradeep S. Kumar, Norman Tam, Max Gage, Sameer Deshpande, Zhiyuan Wu, Alexander Jansen, Liton Dey, Feng Chen, Xianjin Xie, Keyvan Kashefizadeh, Vinod Reddy, Andy Lo, Zhebo Chen, Sidney Huey, Jianshe Tang, He Ren, Mehul Naik, Brian Brown, Sree Kesapragada, Buvna Ayyagari-Sangamalli, El Mehdi Bazizi, Xianmin Tang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10^-9 Ω.cm² Contact Resistivity in Nonplanar FETs.

N. Breil, B.-C. Lee, J. Avila Avendano, J. Jewell, M. Vellaikal, E. Newman, E. M. Bazizi, Ashish Pal, L. Liu, Oleg Gluschenkov, A. Greene, S. Mochizuki, Nicolas Loubet, Benjamin Colombeau, Bala Haran

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021

Integration scheme for 3D NAND with nonreplacement word line and its cell characteristics investigation.

Liu Jiang, Chang Seok Kang, Ashish Pal, El Mehdi Bazizi, Tomohiko Kitajima, Nancy Fung, Gabriela Alva, Amy Child, Bhaskar Bhuyan, Takehito Koshizawa, Sung-Kwan Kang, Gill Lee, David Hwang, Blessy Alexander, Buvna Ayyagari

Proceedings of the IEEE International Memory Workshop, 2021

2020

Modeling and Optimization of Advanced 3D NAND Memory.

Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli

Proceedings of the 2020 Device Research Conference, 2020

2019

TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement.

Benyuan Zhu, E. M. Bazizi, J. H. M. Tng, Z. Li, E. K. Banghart, M. K. Hassan, Y. Hu, D. Zhou, D. Choi, L. Qin, Xuan Wan

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias.

Luca Pirro, Alban Zaka, Olaf Zimmerhackl, T. Hermann, Michael Otto, E. M. Bazizi, Jan Hoentschel, X. Li, R. Taylor

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Highly-Doped Through-Contact Silicon Epi Design at 3 nm node.

Sushant Mittal, Ashish Pal, Mehdi Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, El Mehdi Bazizi, Blessy Alexander, A. B. Sachid, Buvna Ayyagari

Proceedings of the Device Research Conference, 2019

2014

Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation.

E. M. Bazizi, Alban Zaka, Tom Herrmann, Francis Benistant, J. H. M. Tin, J. P. Goh, L. Jiang, M. Joshi, H. van Meer, K. Korablev

Proceedings of the 44th European Solid State Device Research Conference, 2014