E. Latu-Romain

According to our database, E. Latu-Romain authored at least 4 papers between 2009 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.

Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux

Microelectron. Reliab., 2017

2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau

Microelectron. Reliab., 2013

2009

Growth and characterization of ZnO nanowires on p-type GaN.

Ivan-Christophe Robin, M. Lafossas, J. Garcia, M. Rosina, E. Latu-Romain, Pierre Ferret, P. Gilet, A. Tchelnokov, M. Azize, Joel Eymery, G. Feuillet

Microelectron. J., 2009

Optical and electrical characterizations of vertically integrated ZnO nanowires.

E. Latu-Romain, P. Gilet, G. Feuillet, P. Noel, J. Garcia, F. Lévy, A. Chelnokov

Microelectron. J., 2009