E. Brum

According to our database, E. Brum authored at least 6 papers between 2018 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2021

Review of Manufacturing Process Defects and Their Effects on Memristive Devices.

Letícia Maria Veiras Bolzani, Moritz Fieback, Susanne Hoffmann-Eifert, Thiago Copetti, E. Brum, Stephan Menzel, Said Hamdioui, Tobias Gemmeke

J. Electron. Test., 2021

Evaluating the Impact of Process Variation on RRAMs.

E. Brum, Moritz Fieback, Thiago Santos Copetti, H. Jiayi, Said Hamdioui, Fabian Vargas, Letícia Maria Veiras Bolzani

Proceedings of the 22nd IEEE Latin American Test Symposium, 2021

2020

Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects.

Thiago Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls

J. Electron. Test., 2020

2019

Evaluating the Impact of Temperature on Dynamic Fault Behaviour of FinFET-Based SRAMs with Resistive Defects.

G. Cardoso Medeiros, E. Brum, Leticia Bolzani Poehls, Thiago Copetti, Tiago R. Balen

J. Electron. Test., 2019

A Comparative Study Between FinFET and CMOS-Based SRAMs under Resistive Defects.

Thiago Santos Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls

Proceedings of the IEEE Latin American Test Symposium, 2019

2018

Influence of temperature on dynamic fault behavior due to resistive defects in FinFET-based SRAMs.

G. Cardoso Medeiros, E. Brum, Leticia Bolzani Poehls, Thiago Copetti, Tiago R. Balen

Proceedings of the 19th IEEE Latin-American Test Symposium, 2018