Dongwoo Kim

Orcid: 0000-0002-6515-5260

Affiliations:

POSTECH, Power Analog Electronics & Semiconductor Devices Lab, Pohang, Republic of Korea

According to our database¹, Dongwoo Kim authored at least 4 papers between 2012 and 2017.

Collaborative distances:

Dijkstra number² of six.
Erdős number³ of five.

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2017

Fast and accurate method of lifetime estimation for HfSiON/SiO<sub>2</sub> dielectric n-MOSFETs under positive bias temperature instability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

2012

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Dongwoo Kim

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