Dongsheng Yang
Affiliations:- Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, Japan
According to our database1,
Dongsheng Yang
authored at least 13 papers
between 2014 and 2018.
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Bibliography
2018
A Low-Power Pulse-Shaped Duobinary ASK Modulator for IEEE 802.11ad Compliant 60GHz Transmitter in 65nm CMOS.
IEICE Trans. Electron., 2018
A 1.2ps-jitter fully-synthesizable fully-calibrated fractional-N injection-locked PLL using true arbitrary nonlinearity calibration technique.
Proceedings of the 2018 IEEE Custom Integrated Circuits Conference, 2018
2017
IEICE Trans. Electron., 2017
An HDL-synthesized injection-locked PLL using LC-based DCO for on-chip clock generation.
Proceedings of the 22nd Asia and South Pacific Design Automation Conference, 2017
2016
A 0.0055mm<sup>2</sup> 480µW Fully Synthesizable PLL Using Stochastic TDC in 28nm FDSOI.
IEICE Trans. Electron., 2016
Proceedings of the ESSCIRC Conference 2016: 42<sup>nd</sup> European Solid-State Circuits Conference, 2016
An automatic place-and-routed two-stage fractional-N injection-locked PLL using soft injection.
Proceedings of the 21st Asia and South Pacific Design Automation Conference, 2016
2015
A Fully Synthesizable All-Digital PLL With Interpolative Phase Coupled Oscillator, Current-Output DAC, and Fine-Resolution Digital Varactor Using Gated Edge Injection Technique.
IEEE J. Solid State Circuits, 2015
A fully synthesizable injection-locked PLL with feedback current output DAC in 28 nm FDSOI.
IEICE Electron. Express, 2015
14.1 A 0.048mm<sup>2</sup> 3mW synthesizable fractional-N PLL with a soft injection-locking technique.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
Proceedings of the 20th Asia and South Pacific Design Automation Conference, 2015
2014
15.1 A 0.0066mm<sup>2</sup> 780μW fully synthesizable PLL with a current-output DAC and an interpolative phase-coupled oscillator using edge-injection technique.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
A 0.011 mm<sup>2</sup> PVT-robust fully-synthesizable CDR with a data rate of 10.05 Gb/s in 28nm FD SOI.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2014