Dongho Ahn

According to our database, Dongho Ahn authored at least 2 papers between 2011 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory.

Geonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2011

Current status and future prospect of Phase Change Memory.

Byeungchul Kim, Yoon-Jong Song, Sujin Ahn, Younseon Kang, Hoon Jeong, Dongho Ahn, Seokwoo Nam, Gitae Jeong, Chilhee Chung

Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011