Dong Myong Kim

Orcid: 0000-0002-0858-5854

According to our database1, Dong Myong Kim authored at least 12 papers between 2005 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor.
IEEE Access, 2024

2023
Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor.
IEEE Access, 2023

2021
Humidity Effects According to the Type of Carbon Nanotubes.
IEEE Access, 2021

Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System.
IEEE Access, 2021

Vertical and lateral charge losses during short time retention in 3-D NAND flash memory.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System.
IEEE Access, 2020

2019
Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors.
Sensors, 2019

The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018
Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length.
Microelectron. Reliab., 2018

2008
Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation.
Microelectron. Reliab., 2008

2007
A compact HSPICE macromodel of resistive RAM.
IEICE Electron. Express, 2007

2005
Row-by-Row Dynamic Source-Line Voltage Control (RRDSV) Scheme for Two Orders of Magnitude Leakage Current Reduction of Sub-1-V-<i>V<sub>DD</sub></i> SRAM's.
IEICE Trans. Electron., 2005


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