Donato Francesco Falcone

According to our database, Donato Francesco Falcone authored at least 8 papers between 2021 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

All-in-One Analog AI Accelerator: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices.

Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon-Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia

CoRR, February, 2025

2024

Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices.

Davide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia

Proceedings of the Device Research Conference, 2024

2023

High-Conductance, Ohmic-like HfZrO₄ Ferroelectric Memristor.

Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein

CoRR, 2023

Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM.

Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia

Proceedings of the IEEE International Memory Workshop, 2023

2022

Effect of cycling on ultra-thin HfZrO₄, ferroelectric synaptic weights.

Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein

Neuromorph. Comput. Eng., 2022

Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM.

Tommaso Stecconi, Youri Popoff, Roberto Guido, Donato Francesco Falcone, Mattia Halter, Marilyne Sousa, Folkert Horst, Antonio La Porta, Bert J. Offrein, Valeria Bragaglia

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states.

Tommaso Stecconi, Youri Popoff, Roberto Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia

Proceedings of the Device Research Conference, 2022

2021

High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor.

Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021